The NTMS4N01R2 is an N-channel junction field-effect transistor with a continuous drain current of 4.2A and a drain to source breakdown voltage of 20V. It features a drain to source resistance of 45mR and a power dissipation of 2.5W. The device is packaged in a SO-8 case and is rated for operation between -55°C and 150°C. However, it is not RoHS compliant and contains lead, making it a non-lead-free component.
Current Rating4.2A
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NTMS4N01R2 technical specifications.
General
| Continuous Drain Current (ID) | 4.2A |
| Current Rating | 4.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 45mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 10V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTMS4N01R2 Datasheet
Download the complete datasheet for Onsemi NTMS4N01R2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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