N-Channel MOSFET, SO-8 package, offering 20V drain-source breakdown voltage and 4.2A continuous drain current. Features low 45mΩ drain-source resistance at Vgs=10V, 1.2nF input capacitance, and 950mV threshold voltage. Operates from -55°C to 150°C with 2.5W power dissipation. Supplied on a 2500-piece tape and reel, this RoHS compliant component is designed for surface mounting.
PackageSOIC
Current Rating4.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTMS4N01R2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.2A |
| Current Rating | 4.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 770mW |
| Mount | Surface Mount |
| Nominal Vgs | 950mV |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 950mV |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMS4N01R2G Datasheet
Download the complete datasheet for Onsemi NTMS4N01R2G to view detailed technical specifications.
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