P-channel MOSFET, surface mount, SOIC package. Features 20V drain-to-source voltage, 3.86A continuous drain current, and 85mΩ drain-to-source resistance. Operates from -55°C to 150°C with a maximum power dissipation of 730mW. Includes 750pF input capacitance and 35ns fall time. Lead-free and RoHS compliant.
PackageSOIC
Current Rating-3.05A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTMSD3P102R2SG technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.86A |
| Current Rating | -3.05A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 730mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 32ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMSD3P102R2SG Datasheet
Download the complete datasheet for Onsemi NTMSD3P102R2SG to view detailed technical specifications.
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