Quick Jump:
Technical Specifications
Onsemi NTMSD3P303R2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.34A |
| Current Rating | -3.05A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 730mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMSD3P303R2G Datasheet
Download the complete datasheet for Onsemi NTMSD3P303R2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
