P-channel power MOSFET featuring -60V drain-source breakdown voltage and 12A continuous drain current. Offers a maximum drain-source on-resistance of 156mΩ at a 10V gate-source voltage. This single-element transistor is housed in a TO-220-3 package, with a maximum power dissipation of 2.4W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 45ns.
PackageTO-220-3
Current Rating-12A
PolarityP-CHANNEL
Power2.4W
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Technical Specifications
Onsemi NTP2955G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Current Rating | -12A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 156mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 156MR |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.62inch |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2.4W |
| Radiation Hardening | No |
| Rds On Max | 196mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -60V |
| Width | 0.19inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTP2955G Datasheet
Download the complete datasheet for Onsemi NTP2955G to view detailed technical specifications.
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