
The NTQD6866R2 is a 2 N-Channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 940mW and a maximum current rating of 6.9A. The device is packaged in a TSSOP-8 plastic case and is surface mountable. The NTQD6866R2 is not RoHS compliant and contains lead.
Onsemi NTQD6866R2 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | 6.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 90ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 940mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 32mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 20V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NTQD6866R2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
