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Technical Specifications
Onsemi NTQD6866R2G technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | 6.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 90ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 940mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 32mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTQD6866R2G Datasheet
Download the complete datasheet for Onsemi NTQD6866R2G to view detailed technical specifications.
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