P-channel MOSFET transistor in a SOT-23-3 package. Features a 30V drain-source breakdown voltage and a continuous drain current of 1.13A. Offers a low drain-source on-resistance of 155mR at a nominal gate-source voltage of -3V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.25W. This RoHS compliant component is supplied on tape and reel.
PackageSOT-23-3
Current Rating-1.95A
PolarityP-CHANNEL
Power400mW
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Technical Specifications
Onsemi NTR4502PT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.13A |
| Current Rating | -1.95A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 155MR |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Nominal Vgs | -3V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 5.2ns |
| DC Rated Voltage | -30V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTR4502PT1G Datasheet
Download the complete datasheet for Onsemi NTR4502PT1G to view detailed technical specifications.
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