
Single P-Channel Power MOSFET featuring a -30V Drain to Source Breakdown Voltage and a continuous drain current of 1.13A. This surface mount component offers a low Drain to Source Resistance of 200mΩ (Rds On Max) and a maximum power dissipation of 1.25W. Operating across a wide temperature range from -55°C to 150°C, it is supplied in a SOT-23-3 package on a 10000-unit tape and reel. Key switching characteristics include a 5.2ns turn-on delay and a 12ns fall time.
Onsemi NTR4502PT3G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.13A |
| Current Rating | -1.95A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | -20V |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 5.2ns |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTR4502PT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
