N-channel enhancement mode power MOSFET, 30V drain-source voltage, 5A continuous drain current. Features 20mΩ maximum drain-source resistance at 11.5V Vgs. 8-pin WDFN EP package, 3.05mm x 3.05mm x 0.75mm, with a 0.65mm pin pitch for surface mounting. Includes typical gate charge of 8.4nC at 4.5V and 16.6nC at 10V, with 964pF input capacitance at 15V Vds. Maximum power dissipation is 4500mW, operating temperature range from -55°C to 150°C.
PackageWDFN EP
MountingSurface Mount
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Technical Specifications
Onsemi NTTFS4800NTAG technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | WDFN EP |
| Package Description | Very Very Thin Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]|16.6@10VnC |
| Typical Gate Charge @ 10V | 16.6nC |
| Typical Input Capacitance @ Vds | 964@15VpF |
| Maximum Power Dissipation | 4500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi NTTFS4800NTAG Datasheet
Download the complete datasheet for Onsemi NTTFS4800NTAG to view detailed technical specifications.
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