N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 5A continuous drain current. This single MOSFET offers a low 20mΩ drain-source on-resistance at 11.5V Vgs. The component is housed in an 8-pin WDFN EP package with a 3.05mm x 3.05mm footprint and 0.75mm maximum height, designed for surface mounting. Key electrical characteristics include typical gate charge of 8.4nC at 4.5V Vgs and 964pF input capacitance at 15V Vds. Operating temperature range spans from -55°C to 150°C.
Onsemi NTTFS4800NTWG technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | WDFN EP |
| Package Description | Very Very Thin Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]|16.6@10VnC |
| Typical Gate Charge @ 10V | 16.6nC |
| Typical Input Capacitance @ Vds | 964@15VpF |
| Maximum Power Dissipation | 4500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi NTTFS4800NTWG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.