N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 14.3A continuous drain current. This single MOSFET offers a low 5.5mΩ drain-source on-resistance at 10V gate-source voltage. Housed in an 8-pin WDFN EP surface-mount package with a 3.05mm x 3.05mm footprint and 0.75mm maximum height, it is suitable for demanding applications. Typical gate charge is 12.4nC at 4.5V and 28nC at 10V, with input capacitance of 1979pF at 15V drain-source voltage. Maximum power dissipation reaches 4480mW across an operating temperature range of -55°C to 150°C.
Onsemi NTTFS4939NTWG technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | WDFN EP |
| Package Description | Very Very Thin Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 14.3A |
| Maximum Drain Source Resistance | 5.5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|28@10VnC |
| Typical Gate Charge @ 10V | 28nC |
| Typical Input Capacitance @ Vds | 1979@15VpF |
| Maximum Power Dissipation | 4480mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi NTTFS4939NTWG to view detailed technical specifications.
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