Single P-Channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 5.7A. Offers a maximum drain-source on-resistance of 52mΩ at a 10V gate-source voltage. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 40W. Packaged in a WDFN8 3.3x3.3mm surface-mount package with a 0.65mm pitch, this RoHS compliant component exhibits fast switching characteristics with turn-on delay times of 15ns and fall times of 37ns.
PackageTO-252-3
PolarityP-CHANNEL
Power40W
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Technical Specifications
Onsemi NTTFS5116PLTAG technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 52MR |
| Element Configuration | Single |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.258nF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 15ns |
| Width | 3.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTTFS5116PLTAG Datasheet
Download the complete datasheet for Onsemi NTTFS5116PLTAG to view detailed technical specifications.
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