Single N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 40A continuous drain current. Offers low 5.5mΩ drain-source resistance at a nominal 1.7V Vgs. Designed for high efficiency with a maximum power dissipation of 33W and fast switching speeds, including a 11ns turn-on delay and 12ns fall time. Packaged in a compact 3.3x3.3mm WDFN8 surface-mount package, operating from -55°C to 150°C.
PolarityN-CHANNEL
Power33W
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Technical Specifications
Onsemi NTTFS5811NLTWG technical specifications.
General
| Continuous Drain Current (ID) | 53A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.8mm |
| Input Capacitance | 1.57nF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Nominal Vgs | 1.7V |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 6.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 11ns |
| Width | 3.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTTFS5811NLTWG Datasheet
Download the complete datasheet for Onsemi NTTFS5811NLTWG to view detailed technical specifications.
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