The NTTS2P02R2 is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 780mW and a drain to source breakdown voltage of -20V. The device is surface mount and packaged in a small outline S-PDSO-G8 package. The NTTS2P02R2 is not RoHS compliant and contains lead.
Current Rating-2.4A
MountingSurface Mount
PolarityP-CHANNEL
Power780mW
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Technical Specifications
Onsemi NTTS2P02R2 technical specifications.
General
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | -2.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 550pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 780mW |
| Rds On Max | 90mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 33ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTTS2P02R2 Datasheet
Download the complete datasheet for Onsemi NTTS2P02R2 to view detailed technical specifications.
No datasheet is available for this part.
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