The NTUD3129PT5G is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 140mA and a drain to source breakdown voltage of 20V. The device features a drain to source resistance of 5 ohms and a maximum power dissipation of 125mW. It is packaged in a surface mount SOT-963 package and is lead free and RoHS compliant.
PackageSOT-963
MountingSurface Mount
PolarityP-CHANNEL
Power125mW
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Technical Specifications
Onsemi NTUD3129PT5G technical specifications.
General
| Package/Case | SOT-963 |
| Continuous Drain Current (ID) | 140mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 12pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125mW |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 125mW |
| Rds On Max | 5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 112ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTUD3129PT5G Datasheet
Download the complete datasheet for Onsemi NTUD3129PT5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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