PNP Bipolar Junction Transistor (BJT) in a 6-lead SC-74 (SC-59ML) package, designed for digital applications. Features a 50V collector-emitter breakdown voltage and a 200mA continuous collector current. Offers a maximum collector-emitter saturation voltage of 250mV and a minimum hFE of 150. Operates across a temperature range of -55°C to 150°C with 350mW power dissipation. This component is RoHS compliant and halogen-free, supplied on a 3000-piece tape and reel.
PackageSC
Current Rating200mA
PolarityPNP
Power350mW
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Technical Specifications
Onsemi NUS2401SNT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 200mA |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 7V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NUS2401SNT1G Datasheet
Download the complete datasheet for Onsemi NUS2401SNT1G to view detailed technical specifications.
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