The NUS3116MTR2G is a P-channel DFN MOSFET with a drain to source breakdown voltage of -12V and a continuous drain current of -4.4A. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. This device is lead free and RoHS compliant, and is packaged in a tape and reel format with 3000 units per package. The MOSFET has a power dissipation of 1.7W and a drain to source resistance of 32mR.
PackageDFN
MountingSurface Mount
PolarityP-CHANNEL
Power1.7W
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Technical Specifications
Onsemi NUS3116MTR2G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | -4.4A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 32mR |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.7W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NUS3116MTR2G Datasheet
Download the complete datasheet for Onsemi NUS3116MTR2G to view detailed technical specifications.
No datasheet is available for this part.
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