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Integrated Power MOSFET with PNP 8-Pin DFN EP T/R
Onsemi

NUS5530MNR2G

Integrated Power MOSFET with PNP 8-Pin DFN EP T/R

Frequency100MHz
PackageDFN
Voltage Rating20V
Current Rating3.9A
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Technical Specifications

Onsemi NUS5530MNR2G technical specifications.

General

Package/Case
DFN
Collector Base Voltage (VCBO)
-55V
Collector Emitter Saturation Voltage
-100mV
Current Rating
3.9A
Element Configuration
Dual
Emitter Base Voltage (VEBO)
-5V
Halogen Free
Halogen Free
Height
0.95mm
Lead Free
Lead Free
Length
3.3mm
Max Collector Current
2A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Package Quantity
1
Packaging
Tape and Reel
Radiation Hardening
No
RoHS Compliant
Yes
Voltage Rating
20V
Width
3.3mm

Compliance

RoHS
Compliant

Datasheet

Onsemi NUS5530MNR2G Datasheet

Download the complete datasheet for Onsemi NUS5530MNR2G to view detailed technical specifications.

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