The NVB6410ANT4G is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 188W and a continuous drain current of 76A. The device is packaged in a D2PAK-3/2 package and is lead-free and RoHS compliant. It has an input capacitance of 4.5nF and a drain to source resistance of 13mR.
PackageD2PAK
PolarityN-CHANNEL
Power188W
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Technical Specifications
Onsemi NVB6410ANT4G technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 188W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVB6410ANT4G Datasheet
Download the complete datasheet for Onsemi NVB6410ANT4G to view detailed technical specifications.
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