The NVMFD5485NLT3G is a dual N-channel MOSFET with a maximum drain to source voltage of 60V and a continuous drain current of 5.3A. It features a fast switching time with a fall time of 23.7ns and a turn-off delay time of 27.8ns. The device is packaged in a DFN package and is suitable for use in high-temperature environments, with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The NVMFD5485NLT3G is lead-free and halogen-free, and is compliant with RoHS regulations.
PackageDFN
Power2.9W
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Technical Specifications
Onsemi NVMFD5485NLT3G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| Fall Time | 23.7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.9W |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.9W |
| Radiation Hardening | No |
| Rds On Max | 44mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27.8ns |
| Turn-On Delay Time | 9.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVMFD5485NLT3G Datasheet
Download the complete datasheet for Onsemi NVMFD5485NLT3G to view detailed technical specifications.
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