
Dual N-Channel Logic Level Power MOSFET featuring 40V Drain-Source Voltage and 10mΩ Drain-to-Source Resistance. This MOSFET offers a continuous drain current of 12A and a maximum power dissipation of 3W, operating across a temperature range of -55°C to 175°C. Packaged in a 5x6mm DFN with a 1.27P pitch, it supports logic-level gate drive with a 20V Gate-to-Source Voltage. The component is halogen-free, lead-free, and RoHS compliant, delivered on a 1500-piece tape and reel.
Onsemi NVMFD5853NLT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Dual |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.05mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 6.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 10ns |
| Width | 5.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NVMFD5853NLT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
