Dual N-Channel Logic Level Power MOSFET featuring 60V drain-source voltage and 17A continuous drain current. Offers low 39mΩ drain-to-source resistance at VGS=10V. This device is housed in a DFN8 5x6 package with a dual flag configuration, suitable for demanding applications. Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 3.2W. Packaged on a 5000-piece tape and reel, this component is RoHS compliant and halogen-free.
PackageDFN
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Onsemi NVMFD5877NLWFT3G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| Fall Time | 2.4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.2W |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14.5ns |
| Turn-On Delay Time | 4.9ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVMFD5877NLWFT3G Datasheet
Download the complete datasheet for Onsemi NVMFD5877NLWFT3G to view detailed technical specifications.
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