N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 12mΩ maximum drain-source on-resistance. This single element MOSFET offers a continuous drain current of 11.2A and a maximum power dissipation of 107W. Designed for logic-level gate drive with a 20V gate-source voltage, it operates across a wide temperature range from -55°C to 175°C. The component is supplied in a DFN 5x6 package, tape and reel packaged, and is RoHS and Halogen Free compliant.
PackageDFN
PolarityN-CHANNEL
Power107W
Quick Jump:
Technical Specifications
Onsemi NVMFS5844NLT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 11.2A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 12mR |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.46nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.7W |
| Package Quantity | 650 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVMFS5844NLT1G Datasheet
Download the complete datasheet for Onsemi NVMFS5844NLT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.