N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 12mΩ maximum drain-source on-resistance. This single element MOSFET offers a continuous drain current of 11.2A and a maximum power dissipation of 107W. Designed for logic-level gate drive with a 20V gate-source voltage, it operates across a wide temperature range from -55°C to 175°C. The component is supplied in a DFN 5x6 package, tape and reel packaged, and is RoHS and Halogen Free compliant.
PackageDFN
PolarityN-CHANNEL
Power107W
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Technical Specifications
Onsemi NVMFS5844NLT1G technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
11.2A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
12mR
Element Configuration
Single
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
1.46nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.7W
Package Quantity
650
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
107W
Radiation Hardening
No
Rds On Max
12mR
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Onsemi NVMFS5844NLT1G Datasheet
Download the complete datasheet for Onsemi NVMFS5844NLT1G to view detailed technical specifications.
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