The NVMS5P02R2G is a P-channel junction field-effect transistor with a maximum drain to source voltage of 20V and a continuous drain current of 3.95A. It features a maximum power dissipation of 380mW and an on-resistance of 33mR. The transistor is packaged in a lead-free SOIC package and is RoHS compliant. It is suitable for use in a variety of applications, including audio and RF amplifiers, and is available in quantities of 2500 per reel.
PackageSOIC
Resistance0.033R
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi NVMS5P02R2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.95A |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 380mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 33mR |
| Resistance | 0.033R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVMS5P02R2G Datasheet
Download the complete datasheet for Onsemi NVMS5P02R2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.