Single P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and 1A continuous drain current. This component offers a low 180mΩ maximum drain-source on-resistance. Designed with a compact SOT-23-3 package, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 400mW. Key electrical characteristics include a 165pF input capacitance and fast switching times with 7ns turn-on and 9ns turn-off delays.
PackageSOT-23-3
PolarityP-CHANNEL
Power400mW
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Technical Specifications
Onsemi NVR1P02T1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 148mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.01mm |
| Input Capacitance | 165pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Number of Elements | 1 |
| Package Quantity | 6000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 7ns |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVR1P02T1G Datasheet
Download the complete datasheet for Onsemi NVR1P02T1G to view detailed technical specifications.
No datasheet is available for this part.