Onsemi
NXH100B120H3Q0PTG
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm press-fit pins, TIM, 24-BTRAY
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Technical Specifications
Onsemi NXH100B120H3Q0PTG technical specifications.
General
Max Operating Temperature
150
Number of Terminals
22
Min Operating Temperature
-40
Terminal Position
UPPER
Number of Elements
2
Compliance
Lead Free
Yes
REACH
Compliant
Military Spec
False
Datasheet
Onsemi NXH100B120H3Q0PTG Datasheet
Download the complete datasheet for Onsemi NXH100B120H3Q0PTG to view detailed technical specifications.
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