
NPN Bipolar Junction Transistor (BJT) for power amplification, featuring a 60V Collector-Emitter Breakdown Voltage and 8A Max Collector Current. This surface mount device, housed in a SOT-223 package, offers a 50MHz Transition Frequency and a minimum hFE of 60. Operating across a temperature range of -55°C to 150°C, it has a Max Power Dissipation of 1.5W and is RoHS compliant.
Onsemi NZT44H8 technical specifications.
| Package/Case | SOT-223 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NZT44H8 |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 60V |
| Weight | 0.188g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NZT44H8 to view detailed technical specifications.
No datasheet is available for this part.
