PNP Bipolar Junction Transistor (BJT) for power amplification, featuring a 60V Collector-Emitter Breakdown Voltage and a maximum Collector Current of 8A. This surface mount device, housed in a SOT-223 package, offers a transition frequency of 40MHz and a minimum hFE of 60. Operating across a temperature range of -55°C to 150°C, it has a power dissipation of 1.5W and is RoHS compliant.
Frequency40MHz
PackageSOT-223
Current Rating-8A
MountingSurface Mount
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Technical Specifications
Onsemi NZT45H8 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NZT45H8 |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -60V |
| Weight | 0.188g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NZT45H8 Datasheet
Download the complete datasheet for Onsemi NZT45H8 to view detailed technical specifications.
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