NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage and a 3A maximum collector current. Offers a low saturation voltage of 400mV and a minimum DC current gain (hFE) of 250. Operates with a transition frequency of 75MHz and a maximum power dissipation of 1W. Packaged in a SOT-223 case, supplied on a 4000-piece tape and reel. RoHS compliant.
Frequency75MHz
PackageSOT-223
Current Rating3A
MountingSurface Mount
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Technical Specifications
Onsemi NZT560A technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
400mV
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Frequency
75MHz
Gain Bandwidth Product
75MHz
Height
1.6mm
hFE Min
250
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
60V
Max Collector Current
3A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
75MHz
DC Rated Voltage
60V
Weight
0.188g
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NZT560A Datasheet
Download the complete datasheet for Onsemi NZT560A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.