PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 3A and a collector-emitter voltage of 60V. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 75MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Packaged in a SOT-223 case, supplied on a 4000-unit tape and reel. RoHS compliant.
Frequency75MHz
PackageSOT-223
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Onsemi NZT660A technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 75MHz |
| Gain Bandwidth Product | 75MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 75MHz |
| DC Rated Voltage | -60V |
| Weight | 0.188g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NZT660A Datasheet
Download the complete datasheet for Onsemi NZT660A to view detailed technical specifications.
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