NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features 80V collector-emitter voltage (VCEO) and 1.2A maximum collector current. Offers a minimum hFE of 50 and a low collector-emitter saturation voltage of 350mV. Packaged in SOT-223 for surface mounting, supplied on a 4000-unit tape and reel. Operates across a wide temperature range from -55°C to 150°C with 1W power dissipation. Lead-free and RoHS compliant.
PackageSOT-223
Current Rating1.2A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi NZT6717 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 350mV |
| Current Rating | 1.2A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Weight | 0.188g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NZT6717 Datasheet
Download the complete datasheet for Onsemi NZT6717 to view detailed technical specifications.
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