
PNP Bipolar Junction Transistor (BJT) in a SOT-223 surface mount package. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 1.5A. Offers a minimum DC current gain (hFE) of 50 and a collector-emitter saturation voltage of 500mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. This lead-free, RoHS-compliant component is supplied on tape and reel.
Onsemi NZT6726 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Series | NZT6726 |
| DC Rated Voltage | -30V |
| Weight | 0.188g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NZT6726 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
