PNP Bipolar Junction Transistor (BJT) for general purpose amplification. Features a maximum collector current of 1A and a collector-emitter voltage of 80V. Operates within a temperature range of -55°C to 150°C with a power dissipation of 1W. Packaged in a SOT-223 surface mount case, supplied on a 4000-piece tape and reel. This RoHS compliant component offers a minimum hFE of 50.
PackageSOT-223
Current Rating-1A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi NZT6729 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NZT6729 |
| DC Rated Voltage | -80V |
| Weight | 0.188g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NZT6729 Datasheet
Download the complete datasheet for Onsemi NZT6729 to view detailed technical specifications.
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