NPN Bipolar Junction Transistor (BJT) in a TO-243AA (SOT-89 / PCP-1) package, designed for high-performance applications. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 1.5A. Offers a low collector-emitter saturation voltage of 150mV, with a minimum DC current gain (hFE) of 200. Operates across a wide temperature range from -55°C to 150°C, with a transition frequency of 500MHz. This component is RoHS compliant, lead-free, and halogen-free, supplied in a 1000-piece tape and reel.
Frequency1MHz
PackageTO-243AA
PolarityNPN
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Technical Specifications
Onsemi PCP1203-TD-H technical specifications.
General
Package/Case
TO-243AA
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
225mV
Collector-emitter Voltage-Max
225mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
500MHz
Halogen Free
Halogen Free
Height
1.5mm
hFE Min
200
Lead Free
Lead Free
Length
4.5mm
Max Collector Current
1.5A
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
Yes
Series
PCP1203
Transition Frequency
500MHz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi PCP1203-TD-H Datasheet
Download the complete datasheet for Onsemi PCP1203-TD-H to view detailed technical specifications.
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