NPN bipolar junction transistor in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Supplied in an ammo pack with 2000 units.
Onsemi PN2222ATAR technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| Weight | 0.1782g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi PN2222ATAR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.