NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 15V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Offers a minimum DC current gain (hFE) of 40 and a gain-bandwidth product of 500MHz. Operates across a temperature range of -65°C to 150°C with 350mW power dissipation. Through-hole mounting and lead-free construction.
PackageTO-92
Current Rating200mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi PN2369A technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Gain Bandwidth Product | 500MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 15V |
| Weight | 0.201g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PN2369A Datasheet
Download the complete datasheet for Onsemi PN2369A to view detailed technical specifications.
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