PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 800mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting and RoHS compliant.
Frequency200MHz
PackageTO-92-3
Current Rating-800mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi PN2907ATA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 5.33mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 800mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -60V |
| Weight | 0.24g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PN2907ATA Datasheet
Download the complete datasheet for Onsemi PN2907ATA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
