PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 800mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting and RoHS compliant.
Frequency200MHz
PackageTO-92-3
Current Rating-800mA
MountingThrough Hole
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Technical Specifications
Onsemi PN2907ATA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Current Rating
-800mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
5.33mm
hFE Min
100
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
45V
Max Collector Current
800mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-60V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi PN2907ATA Datasheet
Download the complete datasheet for Onsemi PN2907ATA to view detailed technical specifications.
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