NPN bipolar junction transistor (BJT) in a TO-92 package, designed for small signal applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 40 and a collector-emitter saturation voltage of 250mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting for robust integration.
PackageTO-92
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi PN3568 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 5.33mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| Series | PN3568 |
| DC Rated Voltage | 60V |
| Weight | 0.201g |
| Width | 4.19mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi PN3568 Datasheet
Download the complete datasheet for Onsemi PN3568 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.