PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 12V Collector-Emitter Voltage (VCEO) and a 200mA Continuous Collector Current. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 500MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. Designed for through-hole mounting and supplied on tape and reel.
Frequency500MHz
PackageTO-92-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi PN3640_D27Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 200mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 500MHz |
| Gain Bandwidth Product | 500MHz |
| hFE Min | 30 |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 500MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PN3640_D27Z Datasheet
Download the complete datasheet for Onsemi PN3640_D27Z to view detailed technical specifications.
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