PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 200mA and a collector-emitter voltage (VCEO) of 12V. Offers a transition frequency of 700MHz and a minimum hFE of 30. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 350mW.
Onsemi PN4258 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -4.5V |
| Frequency | 700MHz |
| Gain Bandwidth Product | 700MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 700MHz |
| DC Rated Voltage | -12V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi PN4258 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.