PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and 60V collector-base voltage (VCBO). Offers a maximum collector current of 800mA and a minimum hFE of 100. Packaged in a TO-92 through-hole mount with a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C.
PackageTO-92
Current Rating-800mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi PN4355 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1V
Current Rating
-800mA
Emitter Base Voltage (VEBO)
5V
Height
5.33mm
hFE Min
100
Lead Free
Lead Free
Length
5.2mm
Max Collector Current
800mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Series
PN4355
DC Rated Voltage
-60V
Width
4.19mm
Compliance
RoHS
Not Compliant
Datasheet
Onsemi PN4355 Datasheet
Download the complete datasheet for Onsemi PN4355 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.