
NPN RF small signal transistor in a TO-92 package. Features a 2GHz transition frequency and 2GHz operating frequency, with a minimum gain of 15dB and hFE of 25. Supports a continuous collector current of 50mA and a collector-emitter breakdown voltage of 12V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 350mW. Through-hole mounting and lead-free construction.
Onsemi PN5179 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 2GHz |
| Gain | 15dB |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Frequency | 2000 MHz |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Transition Frequency | 2GHz |
| DC Rated Voltage | 12V |
| Weight | 0.006984oz |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi PN5179 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
