NPN Bipolar Junction Transistor (BJT) in a SOT-223-4 package, designed for general-purpose amplification and switching applications. Features a collector-emitter breakdown voltage of 40V, a maximum collector current of 600mA, and a collector-emitter saturation voltage of 1V. Offers a minimum DC current gain (hFE) of 35 and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1.5W. Supplied on a 4000-piece tape and reel, this RoHS compliant component is lead-free.
PackageSOT-223-4
Current Rating600mA
PolarityNPN
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Technical Specifications
Onsemi PZT2222AT3G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PZT2222AT3G Datasheet
Download the complete datasheet for Onsemi PZT2222AT3G to view detailed technical specifications.
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