
NPN bipolar junction transistor in a SOT-223-4 package, offering a 40V collector-emitter voltage and 200mA continuous collector current. Features a 300MHz gain bandwidth product and a maximum power dissipation of 1.5W. Operates across a temperature range of -55°C to 150°C. Supplied on a 1000-piece tape and reel.
Onsemi PZT3904T1G technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1.65mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi PZT3904T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
