PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 40V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Operates with a 250MHz transition frequency and offers a minimum DC current gain (hFE) of 100. Packaged in a SOT-223 surface-mount case, supplied on a 4000-piece tape and reel. RoHS compliant with a 1W maximum power dissipation.
Frequency250MHz
PackageSOT-223
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Onsemi PZT3906 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
1.7mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
-40V
Weight
0.188g
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi PZT3906 Datasheet
Download the complete datasheet for Onsemi PZT3906 to view detailed technical specifications.
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