The PZT751T1 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 2A. It has a gain bandwidth product of 75MHz and a transition frequency of 75MHz. The transistor is packaged in a SOT-223-4 package and is rated for a maximum power dissipation of 800mW. The operating temperature range is from -65°C to 150°C. The PZT751T1 is not RoHS compliant and contains lead.
PackageSOT-223-4
Current Rating-5A
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi PZT751T1 technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 75MHz |
| hFE Min | 75 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 800mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 75MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi PZT751T1 Datasheet
Download the complete datasheet for Onsemi PZT751T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.