
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 80V collector-emitter voltage and 500mA continuous collector current. Offers a minimum hFE of 100 and a gain bandwidth product of 100MHz. Packaged in a SOT-223-4 surface mount case, this lead-free and RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1W. Supplied in a 4000-unit reel.
Onsemi PZTA06 technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 80V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.6mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Cut Tape |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | PZTA06 |
| DC Rated Voltage | 80V |
| Weight | 0.188g |
| Width | 3.56mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi PZTA06 to view detailed technical specifications.
No datasheet is available for this part.
