
NPN Darlington Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage (VCEO) of 80V, 800mA continuous collector current, and a high minimum DC current gain (hFE) of 10000. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a SOT-223 case, this lead-free and RoHS compliant component offers a transition frequency of 125MHz.
Onsemi PZTA28 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 12V |
| Height | 1.6mm |
| hFE Min | 10000 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| DC Rated Voltage | 80V |
| Weight | 0.188g |
| Width | 3.56mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi PZTA28 to view detailed technical specifications.
No datasheet is available for this part.
