
PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector current of 500mA and a collector-emitter voltage of 80V. Operates with a transition frequency of 50MHz and a minimum hFE of 100. Packaged in a SOT-223 surface-mount case, supplied on a 4000-piece tape and reel. RoHS compliant with a maximum power dissipation of 1W.
Onsemi PZTA56 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1.7mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
| Weight | 0.188g |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi PZTA56 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
