PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector current of 500mA and a collector-emitter voltage of 80V. Operates with a transition frequency of 50MHz and a minimum hFE of 100. Packaged in a SOT-223 surface-mount case, supplied on a 4000-piece tape and reel. RoHS compliant with a maximum power dissipation of 1W.
Frequency50MHz
PackageSOT-223
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Onsemi PZTA56 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-200mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
200mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-4V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.7mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
80V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-80V
Weight
0.188g
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi PZTA56 Datasheet
Download the complete datasheet for Onsemi PZTA56 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.